
The MRS-6 is fabricated by using the highest accuracy electron direct write semiconductor manufacturing equipment available today. The pattern is built on a silicon wafer with ~15nm Cr film. This film, which is significantly thinner that that of the previous MRS-5, has superior edge quality. Imaging contrast in both secondary and backscattered electron mode is possible with field emission SEMs and newer tungsten or LaB6 SEMs. The overall size is ~ 3mm x 3mm x 0.25mm thick. The MRS-6 is fully conductive. No conductive coatings are necessary.
The MRS-6 has three types of pattern (the geometric design of the MRS-6 and previous MRS-5 are the same):
Typical applications include:
LEAD TIMES: Average Lead Times are shown individually in days for any products not currently in stock. Whilst we are working closely with our suppliers to minimise the impact of global supply chain issues, and regularly update our product prices and lead times, some are subject to change due to supply chain fluctuations.
Delivery is calculated at the checkout, please see our delivery and returns page for more information.